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revisions ltr description date (yr - mo - da) approved a add device type 02. add appendix a for device type 02 only. make editorial changes throughout. 97- 04- 09 r. monnin b make change to 1.4, 30.2.1, i s(off) overvoltage and i d(off) overvoltage tests. - ro 97- 09- 12 r. monnin c make change to boilerplate and add device class t for device type 02. - ro 98- 12- 02 r. monnin d add level p to table i. make change to 1.5 and glassivation as specified under appendix a. - ro 99- 04- 22 r. monnin e make change to enable delay waveform as specified on figure 6. - ro 00- 04- 14 r. monnin f make changes to supply voltage and v ref to gnd limits as specified under 1.3. make clarification to paragraphs 4.4.4.2 and 4.4.4.3. - ro 04- 06- 25 r. monnin g under 1.5, move footnote 3 / to the latch up parameter. make correction to the r l value under the t on(a) , t off(a) test as specified in table i. - ro 06- 02- 24 r. monnin h add a junction temperature limit to paragraph 1.3 and make clarifications to the figure 3 logic diagram. - ro 09- 06- 17 j. rodenbeck j add device type 03. add paragraphs 2.2, 6.7 , and table ib. under table iib, delete +i s(off) , - i s(off) , - i d(off) , +i d(off) , +i d(on) , - i d(on) parameters. under figure a - 1, backside metallization, delete the word ?none? and replace with ?silicon?. update boilerplate paragraph to current mil - prf - 38535 requirements. - ro 11- 01- 26 c. saffle k add device types 04 and 05. make changes to paragraphs 1.2.2, 1.3, 1.4, 1.5, 4.4.4.2, a.1.2.2, a.1.2.4, table ia, table ib, table iia, table iib, and figure 1. delete paragraph 4.4.4.2.1 . - ro 11- 06- 28 c. saffle l add case outline z. make change to paragraph 3.2.5. delete figure 4 radiation exposure circuit . delete device class m requirements. - ro 13- 05- 02 c. saffle m add device types 04 and 05 to table iib. delete ldr, hdr, and edlrs references from paragraphs 1.2.2 and a.1.2.2. - ro 13- 0 7 - 03 c. saffle n add device type 05 to the analog input overvoltage range (power on/off) parameter as specified under paragraph 1.3. - ro 13- 08- 20 c. saffle rev sheet rev n n n n n n n n n n n sheet 15 16 17 18 19 20 21 22 23 24 25 rev status rev n n n n n n n n n n n n n n of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by rajesh pithadia dla land and maritime columbus, ohio 43218 - 3990 http://www.landandmaritime.dla.mil standard microcircuit drawing this drawing is available for use by all departments and agencies of the department of defense checked by rajesh pithadia approved by michael frye microcircuit, digital - linear, radiation hardened, single 16 - channel analog mux / demux with overvoltage protection, monolithic silicon drawing approval date 95- 08- 23 amsc n/a revision level n size a cage code 67268 5962- 95630 sheet 1 of 25 dscc form 2233 apr 97 5962- e 545- 13
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents three product assurance class levels consisting of high reliability (device class q), space application (device class v) and for appropriate satellite and similar applications (device class t). a choice of case outli nes and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels is reflected in the pin. for device class t, the user is encouraged to review the manufacturer?s quali ty management (qm) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 pin . the pin is as shown in the following example: 5962 r 95630 01 v x c federal stock class designator rha designator (see 1.2.1) device type (see 1.2.2) device class designator case outline (see 1.2.4) lead finish (see 1.2.5) \ / (see 1.2.3) \ / drawing number 1.2.1 rha designator . device classes q, t and v rha marked devices meet the mil - prf - 38535 specified rha levels and are marked with the appropriate rha designator. a dash ( - ) indicates a non- rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 hs - 1840rh radiation hardened dielectrically isolated (di) cmos single 16 - channel analog mux / demux with high impedance analog input overvoltage protection 02 hs - 1840arh radiation hardened di bicmos single 16 - channel analog mux / demux with high impedance analog input overvoltage protection 03 hs - 1840brh radiation hardened di bicmos single 16- channel analog mux / demux with high impedance analog input over voltage protection 04 hs - 1840aeh radiat ion hardened di bicmos single 16- channel analog mux / demux with high impedance analog input overvoltage protection. 05 hs - 1840beh radiation hardened di bicmos single 16- channel analog mux / demux with high impedance analog input overvoltage protection.
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 3 dscc form 2234 apr 97 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation q, v cer tification and qualification to mil - prf -38535 t certification and qualification to mil - prf - 38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 case outline(s) . the case outline(s) are as designated in mil - std - 1835 and as follows: outline letter descriptive designator terminals package style x cdip2 - t28 28 dual -in - line y cdfp3 - f28 28 flat pack z cdfp3 - f28 28 flat pack with grounded lid 1.2.5 lead finish . the lead finish is as speci fied in mil - prf - 38535 for device classes q, t and v. 1.3 absolute maximum ratings . 1 / supply voltage between v+ and v - : device type 01 ......................................................................................... +40 v device types 02, 03, 04, and 05 .............................................................. +33 v supply voltage between v+ and gnd : device type 01 ......................................................................................... +20 v device types 02, 03, 04, and 05 .............................................................. +16.5 v supply voltage between v - and gnd : device type 01 ......................................................................................... -20 v device types 02, 03, 04, and 05 .............................................................. - 16.5 v v ref to gnd : device type 01 ......................................................................................... +20 v device types 02, 03, 04, and 05 ............................................................. +16.5 v digital input overvoltage ran ge .................................................................... ((gnd) - 4 v)
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 4 dscc form 2234 apr 97 1.4 recommended operating conditions . positive supply voltage (v+): device types 01, 02, and 04 .................................................................................. +15 v device types 03 and 05 ......................................................................................... +12 v
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 5 dscc form 2234 apr 97 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. department of defense specification mil - prf -38535 - integrated circuits, manufacturing, general specification for. department of de fense standards mil - std -883 - test method standard microcircuits. mil - std -1835 - interface standard electronic component case outlines. department of defense handbooks mil - hdbk -103 - list of standard microcircuit drawings. mil - hdbk -780 - st andard microcircuit drawings. (copies of these documents are available online at http://quicksearch.dla.mil or from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111 - 5094.) 2.2 non - government publications . the following document(s) form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. astm international (astm) astm f1192 - standard guide for the measurement of single event phenomena (sep) induced by heavy ion irradiation of semiconductor devices. (copies of these documents are available online at http://www.astm.org or from astm international, 100 barr harbor drive, p.o. box c700, west conshohocken, pa, 19428 - 2959). 2. 3 order of precedence. i n the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q, t and v shall be in accordance with mil - prf -38535 as specified herein , or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. 3.1.1 microcircuit die . for the requirements of microcircuit die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil - prf -38535 and herein for device classes q, t and v. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections shall be as specified on figure 1. 3.2.3 truth table . the truth table sh all be as specified on figure 2. 3.2.4 l ogic diagrams . the logic diagrams shall be as specified on figure 3. 3.2.5 radiation exposure circuit . the radiation exposure circuit shall be maintained by the manufacturer under document revision level cont rol and shall be made available to the preparing and acquiring activity upon request.
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 6 dscc form 2234 apr 97 3.3 electrical performance characteristics and postirradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and p ostirradiation parameter limits are as specified in table i a and shall apply over the full ambient operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in table ii a . the elect rical tests for each subgroup are defined in table i a. 3.5 marking . the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked. for packages where marking of the entire smd pin number is not fea sible due to space limitations, the manufacturer has the option of not marking the "5962 - " on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q, t and v shall be in accordance with mil -prf - 38535. 3.5.1 certification/compliance mark . the certification mark for device classes q, t and v shall be a "qml" or "q" as required in mil - prf -38535. 3.6 certificate of compliance . for device classes q, t and v, a certificate of compliance shall be required from a qml - 38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). the certificate of compliance submitted to dla land and maritim e - va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q, t and v, the requirements of mil - prf - 38535 and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q, t and v in mil - prf - 38535 shall be provided with each lot of microcircuits delivered to this drawing.
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 7 dscc form 2234 apr 97 table ia. electrical performance characteristics . test symbol conditions 1 / - 55
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 8 dscc form 2234 apr 97 table ia. electrical performance characteristics - continued. test symbol conditions 1 / - 55
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 9 dscc form 2234 apr 97 table ia. electrical performance characteristics - continued. test symbol conditions 1 / - 55 ? ?
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 10 dscc form 2234 apr 97 table ia. electrical performance characteristics - continued. test symbol conditions 1 / - 55 ? ? ?
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 11 dscc form 2234 apr 97 table ia. electrical performance characteristics - continued. 4 / v en = 4.5 v. 5 / for device type 01, v s = +25 v. for device types 02, 03, 04, and 0 5, v s = +35 v. 6 / for device type 01, v s = - 25 v. for device types 02, 03, 04, and 0 5, v s = - 35 v. 7 / v en = 0.5 v. 8 / for device type s 03 and 05 , te sted over tolerance range of
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 12 dscc form 2234 apr 97 de vice types 01, 02, 03, 04 and 05 case outlines x , y and z terminal number terminal symbol 1 v+ 2 nc 3 nc 4 in 16 5 in 15 6 in 14 7 in 13 8 in 12 9 in 11 10 in 10 11 in 9 12 gnd 13 v ref 14 a3 15 a2 16 a1 17 a0 18 en 19 in 1 20 in 2 21 in 3 22 in 4 23 in 5 24 in 6 25 in 7 26 in 8 27 v- 28 out nc = no connection figure 1. terminal connections .
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 13 dscc form 2234 apr 97 truth table a 3 a 2 a 1 a 0 en on channel x x x x h none l l l l l 1 l l l h l 2 l l h l l 3 l l h h l 4 l h l l l 5 l h l h l 6 l h h l l 7 l h h h l 8 h l l l l 9 h l l h l 10 h l h l l 11 h l h h l 12 h h l l l 13 h h l h l 14 h h h l l 15 h h h h l 16 figure 2. truth table .
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 14 dscc form 2234 apr 97 note: main switch inxx: switch on, body tied to source. switch off, body tied to v cc ? 0.7 v. figure 3. logic diagram .
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 15 dscc form 2234 apr 97 figure 4 . test circuits for dc levels .
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 16 dscc form 2234 apr 97 figure 5 . test circuits and waveforms for ac levels .
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 17 dscc form 2234 apr 97 4. verification 4.1 sampling and inspection . for device classes q, and v, sampling and inspection procedures shall be in accordance with mil - prf - 38535 or as modified in the device manufacturer's quality management (qm) plan, including screening (4.2), qualification (4.3), and conformance inspectio n (4.4). the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class t, sampling and inspection procedures shall be in accordance with mil - prf - 38535 and the device manufacturer?s qm plan including scr eening, qualification, and conformance inspection. the performance envelope and reliability information shall be as specified in the manufacturer?s qm plan. 4.2 screening . for device classes q and v, screening shall be in accordance with mil - prf -385 35, and shall be conducted on all devices prior to qualification and technology conformance inspection . for device class t, screening shall be in accordance with the device manufacturer?s quality management (qm) plan, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2. 1 additional criteria for device classes q, t and v . a. the burn - in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manu facturer's qm plan in accordance with mil - prf - 38535. the burn- in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil - prf - 38535 and shall be made availab le to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of mil - std -883. b. for device classes q, t an d v interim and final electrical test parameters shall be as specified in table ii a herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil - prf - 38535, a ppendix b. 4.3 qualification inspection for device classes q, t and v . qualification inspection for device classes q and v shall be in accordance with mil - prf - 38535. qualification inspection for device class t shall be in accordance with the device manufacturer?s quality management (qm) plan. inspections to be performed shall be those specified in mil - prf - 38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for classes q and v shall be in accordance with mil - prf - 38535 including groups a, b, c, d, and e inspections, and as specified herein. technology conformance inspection for class t shall be in accordance with the device manufacturer?s quality management (qm) plan. 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. subgroups 5 and 6 in table i, method 5005 of mil - std - 883 shall be omitted. c. subgroup 4 (c a , c s , c d , and v iso measurements) should be measured for initial qualification and after any process or design changes which may affect input or output capacitance. d. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device. 4.4.2 group c inspection . the group c inspection end - point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device classes q, t and v . the steady - state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil - prf - 38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil - prf - 38535 and shall be made available to the acquiring or p reparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specif ied in method 1005 of mil - std -883. 4.4.3 group d inspection . the group d inspection e nd- point electrical parameters shall be as specified in table iia herein.
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 18 dscc form 2234 apr 97 table ii a. electrical test requirements . test requirements subgroups (in accordance with mil - prf - 38535, table iii) device class q device class v device class t interim electrical parameters (see 4.2) 1,7,9 1,7,9 as specified in qm plan final electrical parameters (see 4.2) 1,2,3,7,8a, 1 / 8b,9,10,11 1,2,3, 1 / 2 / 7,8a,8b,9, 10,11 as specified in qm plan group a test requirements (see 4.4) 1,2,3,4,7,8a, 8b,9,10,11 1,2,3,4,7, 8a,8b,9,10,11 as specified in qm plan group c end - point electrical parameters (see 4.4) 1,2,3,7,8a,8b, 9,10,11 1,2,3,7,8a, 2 / 8b,9,10,11 as specified in qm plan group d end - point electrical parameters (see 4.4) 1,7,9 1,7,9 as specified in qm plan group e end - point electrical parameters (see 4.4) 1,7,9 1,7,9 as specified in qm plan 1 / pda applies to subgroup 1. for device class v, 1, 7, and ? ? ?
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 19 dscc form 2234 apr 97 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes q and v shall be as specified in mil - prf - 38535. end- point electrical parameters shall be as specified in table ii a h erein. 4.4.4.1 group e inspection for device class t . for device class t, the rha requirements shall be in accordance with the class t radiation requirements of mil - prf - 38535. end- point electrical parameters shall be as specified in table ii a herein. 4.4.4.2 total dose irradiation testing . total dose irradiation testing high dose rate (hdr) shall be performed in accordance with mil - std - 883 method 1019, condition a and as specified herein for device types 01, 02, 03, 04 and 05. total dose irradiation testing (eldrs ? l ow d ose r ate) shall be performed in accordance with mil- std - 883 method 1019, condition d and as specified herei n for device types 04 and 05. for device c lass t, the total dose requirements shall be in accordance with the class t radiation requirements of mil - prf -38535. 4.4.4.3 dose rate induced latch - up testing . when required by the customer, dose rate induced latch- up testing shall be performed in acco rdance with method 1020 of mil - std - 883 and as specified herein. tests shall be performed on devices, sec, or approved test structures at technology qualification and after any design or process changes which may affect the rha capability of the process. 4.4.4.4 dose rate upset testing . when specified in the purchase order or contract, dose rate upset testing shall be performed in accordance with test method 1021 of mil - std - 883 and herein (see 1.5 herein). a. transient dose rate upset testing shall be p erformed at initial qualification and after any design or process changes which may affect the rha performance of the devices. test 10 devices with 0 defects unless otherwise specified. b. transient dose rate upset testing for class q, t, and v devices shall be performed as specified by a trb approved radiation hard ness assurance plan and mil - prf - 38535. 4.4.4.5 single event phenomena (sep) . when specified in the purchase order or contract, sep testing shall be perform ed on class v devices. sep testin g shall be performed on the standard evaluation circuit (sec) or alternate sep test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the ups et or latchup characteristics. test four devices with zero failures. astm f1192 may be used as a guideline when performing sep testing. the test conditions for sep are as follows: a. the ion beam angle of incidence shall be between normal to the die surface and 60
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 2 0 dscc form 2234 apr 97 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil - prf - 38535 for device classes q, t and v. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipmen t), design applications, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.2 configuration control of smd's . all pro posed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform dla land and maritime when a system application requires configuration control and which smd's are applicable to that system. dla land and maritime will maintain a record of users and this list will be used f or coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dla land and maritime - va, telephone (614) 692 - 8108 . 6.4 comments . comments on this drawing should be directed to dla land and maritime - va , columbus, ohio 43218- 3990, or telephone (614) 692 - 054 0 . 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil - prf - 38535 and mil- hdbk -1331. 6.6 sources of su pply . 6.6.1 sources of supply for device classes q, t and v . sources of supply for device classes q, t and v are listed in mil - hdbk -103 and qml - 38535. the vendors listed in mil - hdbk - 103 and qml - 38535 have submitted a certificate of compliance (see 3.6 herein) to dla land and maritime - va and have agreed to this drawing. 6.7 additional information . when applicable, a copy of the following additional data shall be maintained and available from the device manufacturer: a. rha upset levels. b. test conditions (sep). c. occurrence of latchup (sel).
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 21 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -95630 a.1 scope a.1.1 scope . this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manuf acturers list (qml) program. qml microcircuit die meeting the requirements of mil - prf - 38535 and the manufacturers approved qm plan for use in monolithic microcircuits, multi - chip modules (mcms), hybrids, electronic modules, or devices using chip and wire designs in accordance with mil - prf - 38534 are specified herein. two product assurance classes consisting of military high reliability (device class q) and space application (device class v) are reflected in the part or identification number (pin). when av ailable, a choice of radiation hardiness assurance (rha) levels are reflected in the pin. a.1.2 pin . the pin is as shown in the following example: 5962 f 95630 02 v 9 a federal stock class designator rha designator (see a.1.2.1) device type (see a.1.2.2) device class designator die code die details (see a.1.2.4) \ / (see a.1.2.3) \ / drawing number a.1.2.1 rha designator . device classes q and v rha identified die meet the mil - prf - 38535 specified rha levels. a dash (- ) indicates a non- rha die. a.1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit func tion 02 hs - 1840arh radiation hardened di single 16 - channel analog mux / demux with high impedance analog input overvoltage protection 03 hs - 1840brh radiation hardened di single 16 - channel analog mux / demux with high impedance analog input overvoltage protection 04 hs - 1840aeh radiation hardened di single 16 - channel analog mux / demux with high i mpedance analog input overvoltage protection 05 hs - 1840beh radiation hardened di single 16- channel analog mux / dem ux with high impedance analog input overvoltage protection a.1.2.3 device class designator . device class device requirements documentation q or v certification and qualification to the die requirements of mil - prf -38535
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 22 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -95630 a.1.2.4 die details . the die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other ass embly related information, for each product and variant supplied to this appendix. a.1.2.4.1 die physical dimensions . die type figure number 02, 03 , 04, 05 a-1 a.1.2.4.2 die bonding pad locations and electrical functions . die type figure number 02, 03 , 04, 05 a-1 a.1.2.4.3 interface materials . die type figure number 02, 03 , 04, 05 a-1 a.1.2.4.4 assembly related information . die type figure number 02, 03 , 04, 05 a-1 a.1.3 absolute maximum ratings . see paragraph 1.3 herein for details. a.1.4 recommended operating conditions . see paragraph 1.4 herein for details. a.2 applicable documents. a.2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. department of defense specification mil - prf -38535 - integrated circuits, manufacturing, general specification for. department of defense standard mil - std -883 - test method standard microcircuits. department of defense handbooks mil - hdbk -103 - list of standard microcircuit drawings. mil - hdbk -780 - standard microcircuit drawings. (copies of these documents are available online at http://quicksearch.dla.mil or from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111 - 5094.)
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 23 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -95630 a.2.2 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. a.3 requirements a.3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil - prf - 38535 and as specified herein or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. a.3.2 design, construction and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil - prf - 38535 and herein and the manufacturer?s qm plan for device classes q and v. a.3.2.1 die physical dimensions . the die physical dimensions shall be as specified in a.1.2.4.1 and on figure a -1. a.3.2.2 die bonding pad locations and electrical functions . the die bonding pad locations and electrical functions shall be as speci fied in a.1.2.4.2 and on figure a -1. a.3.2.3 interface materials . the interface materials for the die shall be as specified in a.1.2.4.3 and on figure a -1. a.3.2.4 assembly related information . the assembly related information shall be as specified in a.1.2.4.4 and on figure a -1. a.3.2.5 truth table . the truth table shall be as defined in paragraph 3.2.3 herein. a.3.2.6 radiation exposure circuit . the radiation exposure circuit shall be as defined in paragraph 3.2.5 herein. a.3.3 electrical p erformance characteristics and post - irradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and post - irradiation parameter limits are as specified in table ia of the body of this document. a.3.4 electr ical test requirements . the wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table ia. a.3.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer?s identification and the pi n listed in a.1.2 herein . the certification mark shall be a ?qml? or ?q? as required by mil - prf -38535. a.3.6 certification of compliance . for device classes q and v, a certificate of compliance shall be required from a qml - 38535 listed manufacturer in order to supply to the requirements of this drawing (see a.6.4 herein). the certificate of compliance submitted to dla land and maritime - va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, the requirements of mil - prf - 38535 and the requirements herein. a.3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil - prf - 38535 shall be provided with each lot of microcircuit die delivered to this drawing.
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 24 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -95630 a.4 verification a.4.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil - prf - 38535 or as modified in the device manufacturer?s quality management (qm) plan. the modifications in the qm plan shall not affect the form, fit, or function as described herein. a.4.2 screening . for device classes q and v, screening shall be in accordance with mil - prf - 38535, and as defined in the manufacturer?s qm plan. as a minimum, it shall consist of: a. wafer lot acceptance for class v product using the criteria defined in mil - std - 883, method 5007. b. 100% wafer probe (see paragraph a.3.4 herein). c. 100% internal visual inspection to the applicable class q or v criteria defined in mil - std - 883, method 2010 or the alternate procedures allowed in mil - std - 883, method 5004. a.4.3 conformance inspection . a.4.3.1 group e inspection . group e inspection is required onl y for parts intended to be identified as radiation assured (see a.3.5 herein). rha levels for device classes q and v shall be as specified in mil - prf - 38535. end point electrical testing of packaged die shall be as specified in table ii a herein. group e tests and conditions are as specified in paragraphs 4.4.4, 4.4.4.1, 4.4.4.2, 4.4.4.3, 4.4.4.4, and 4.4.4.5 herein. . a.5 die carrier a.5.1 die carrier requirements . the requirements for the die carrier shall be accordance with the manufacturer?s qm pl an or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical an d electrostatic protection. a.6 notes a.6.1 intended use . microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with mil - prf - 38535 or mil- prf - 38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. a.6.2 comments . comments on this appendix should be directed to dla land and maritime - va, columbus, ohio, 43218- 3990 or telephone (614) -692- 0540. a.6.3 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil - prf - 38535 and mil- hdbk -1331. a.6.4 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml - 38535. the vendors listed within mil - hdbk - 103 and qml - 38535 have submitted a certificate of compliance (see a.3.6 herein) to dla land and maritime - va and have agreed to this drawing.
standard microcircuit drawing size a 5962- 95630 dla land and maritime columbus, ohio 43218 - 3990 revision level n sheet 25 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -95630 note: pad numbers reflect terminal numbers when placed in case outlines x , y, and z (see figure 1). die bonding pad locations and electrical functions die physical dimensions. die size: 4080 microns x 2820 microns. die thickness: 483 microns
standard microcircuit drawing bulletin date: 13-08-20 approved sources of supply for smd 5962 -95630 are listed below for immediate acquisition information only and shall be added to mil - hdbk - 103 and qml- 38535 during the next revision. mil- hdbk - 103 and qml- 38535 will be revised to include the addition or deletion of sources. the vendors listed below ha ve agreed to this drawing and a certificate of compliance has been submitted to and accepted by dla land and maritime - va. this information bulletin is superseded by the next dated revision of mil - hdbk - 103 and qml-38535. dla land and maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/programs/smcr/ . standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962r9563001vxc 3 / hs1 - 1840rh -q 5962r9563001vyc 3 / hs9 - 1840rh -q 5962r9563001qxc 3 / hs1 - 1840rh -8 5962r9563001qyc 3 / hs9 - 1840rh -8 5962f9563002vxc 34371 hs1 - 1840arh -q 5962f9563002vyc 34371 hs9 - 1840arh -q 5962f9563002qxc 34371 hs1 - 1840arh -8 5962f9563002qyc 34371 hs9 - 1840arh -8 5962f9563002v9a 34371 hs0 - 1840arh -q 5962r9563002txc 34371 hs1 - 1840arh -t 5962r9563002tyc 3 / hs9 - 1840arh -t 5962f9563002vzc 34371 hs9g - 1840arh -q 5962f9563003vxc 34371 hs1 - 1840brh -q 5962f9563003vyc 34371 hs9 - 1840brh -q 5962f9563003qxc 34371 hs1 - 1840brh -8 5962f9563003qyc 34371 hs9 - 1840brh -8 5962f9563003v9a 34371 hs0 - 1840brh -q 5962f9563004vxc 34371 hs1 - 1840aeh -q 5962f9563004vyc 34371 hs9 - 1840aeh -q 5962f9563004v9a 34371 hs0 - 1840aeh -q 5962f9563005vxc 34371 hs1 - 1840beh -q 5962f9563005vyc 34371 hs9 - 1840beh -q 5962f9563005v9a 34371 hs0 - 1840beh -q 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / not available from an approved source of supply. 1 of 2
standard microcircuit drawing bulletin ? continued. date: 13-08-20 vendor cage vendor name number and address 34371 intersil corporation 1001 murphy ranch road milpitas, ca 95035 - 6803 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin. 2 of 2

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